Title :
A process-oriented model for the simulation of base pushout in integrated bipolar devices
Author_Institution :
University of Pennsylvania, Philadelphia, Pa.
fDate :
12/1/1975 12:00:00 AM
Abstract :
A closed-form solution to Poisson´s equation applied to the base-collector region of an integrated bipolar device is developed. The solution comprises an extension to simplified analyses published elsewhere, and it leads to a process-oriented definition of base pushout phenomena, Moreover, the analytical results evolve into practical suggestions for effecting a high-injection simulation of gain and gain-bandwidth product characteristics.
Keywords :
Analytical models; Circuit optimization; Circuit simulation; Closed-form solution; Electronic circuits; Mice; Performance analysis; Performance gain; Poisson equations; Semiconductor process modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18329
