DocumentCode
1051852
Title
A process-oriented model for the simulation of base pushout in integrated bipolar devices
Author
Choma, John
Author_Institution
University of Pennsylvania, Philadelphia, Pa.
Volume
22
Issue
12
fYear
1975
fDate
12/1/1975 12:00:00 AM
Firstpage
1079
Lastpage
1086
Abstract
A closed-form solution to Poisson´s equation applied to the base-collector region of an integrated bipolar device is developed. The solution comprises an extension to simplified analyses published elsewhere, and it leads to a process-oriented definition of base pushout phenomena, Moreover, the analytical results evolve into practical suggestions for effecting a high-injection simulation of gain and gain-bandwidth product characteristics.
Keywords
Analytical models; Circuit optimization; Circuit simulation; Closed-form solution; Electronic circuits; Mice; Performance analysis; Performance gain; Poisson equations; Semiconductor process modeling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1975.18329
Filename
1478164
Link To Document