DocumentCode :
1051854
Title :
-Annealing Effects on Characteristics of Schottky-Barrier MOSFETSAuthor :
Jang, Moongyu ; Kim, Yarkyeon ; Jeon, Myungsim ; Choi, Cheljong ; Baek, Inbok ; Lee, Seongjae ; Park, Byoungchul
Author_Institution :
IT Fusion Technol. Res. Div., Korea Electron. & Telecommun. Res. Inst., Daejeon
Volume :
53
Issue :
8
fYear :
2006
Firstpage :
1821
Lastpage :
1825
Abstract :
Schottky-barrier (SB) heights of erbium and platinum silicides are evaluated using current-voltage and capacitance-voltage methods in the Schottky diodes. For the erbium-silicided Schottky diodes, the extracted SB heights show big differences depending on the extraction methods, due to the existence of the interface traps. The interface traps in the erbium silicide are efficiently cured by N2 annealing. Various sizes of the erbium/platinum-silicided n/p-type SB-MOSFETs are manufactured from 20 mum to 23 nm. Also, N2 annealing is applied to enhance the SB-MOSFETs´ subthreshold characteristics by minimizing the interface-trap density. The manufactured SB-MOSFETs show a good drain-induced barrier thinning and subthreshold swing characteristics, due to the existence of a SB between the source and the channel, which indicates the possible application of the SB-MOSFETs in a nanoscale regime
Keywords :
MOSFET; Schottky barriers; annealing; erbium compounds; interface states; platinum compounds; N2; Schottky-barrier MOSFET; annealing effects; capacitance-voltage method; current-voltage method; drain-induced barrier thinning; erbium silicide; interface traps; platinum silicide; subthreshold swing; Annealing; Capacitance; Erbium; MOSFETs; Manufacturing; Platinum; Schottky diodes; Silicides; Silicon; Temperature; Drain-induced barrier thinning (DIBT); SB-MOSFETs; Schottky diode; interface trap; scaling; subthreshold swing (SS);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2006.876575
Filename :
1661883
Link To Document :
