$\\hbox {N}_{2}$ -Annealing Effects on Characteristics of Schottky-Barrier MOSFETS

Author

Jang, Moongyu ; Kim, Yarkyeon ; Jeon, Myungsim ; Choi, Cheljong ; Baek, Inbok ; Lee, Seongjae ; Park, Byoungchul

Author_Institution

IT Fusion Technol. Res. Div., Korea Electron. & Telecommun. Res. Inst., Daejeon

Volume

53

Issue

8

fYear

2006

Firstpage

1821

Lastpage

1825

Abstract

Schottky-barrier (SB) heights of erbium and platinum silicides are evaluated using current-voltage and capacitance-voltage methods in the Schottky diodes. For the erbium-silicided Schottky diodes, the extracted SB heights show big differences depending on the extraction methods, due to the existence of the interface traps. The interface traps in the erbium silicide are efficiently cured by N₂ annealing. Various sizes of the erbium/platinum-silicided n/p-type SB-MOSFETs are manufactured from 20 mum to 23 nm. Also, N₂ annealing is applied to enhance the SB-MOSFETs´ subthreshold characteristics by minimizing the interface-trap density. The manufactured SB-MOSFETs show a good drain-induced barrier thinning and subthreshold swing characteristics, due to the existence of a SB between the source and the channel, which indicates the possible application of the SB-MOSFETs in a nanoscale regime

Keywords

MOSFET; Schottky barriers; annealing; erbium compounds; interface states; platinum compounds; N₂; Schottky-barrier MOSFET; annealing effects; capacitance-voltage method; current-voltage method; drain-induced barrier thinning; erbium silicide; interface traps; platinum silicide; subthreshold swing; Annealing; Capacitance; Erbium; MOSFETs; Manufacturing; Platinum; Schottky diodes; Silicides; Silicon; Temperature; Drain-induced barrier thinning (DIBT); SB-MOSFETs; Schottky diode; interface trap; scaling; subthreshold swing (SS);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.876575

Filename

1661883