Title :
High-speed modulation of IMPATT diodes
Author :
Moss, P.B. ; Hobson, G.S.
Author_Institution :
Trent Polytechnic, Nottingham, England
fDate :
12/1/1975 12:00:00 AM
Abstract :
A high-speed bias circuit modulation process which occurs in Gunn oscillators by virtue of their equivalent circuit is shown to also occur in IMPATT oscillators.
Keywords :
Amplitude modulation; Chirp modulation; Diodes; Equivalent circuits; Frequency modulation; Gunn devices; Oscillators; Phase modulation; Radio frequency; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18332