Enhanced Carbon Confinement of Ultranarrow Boron Profiles in SiGeC HBTs

Author

Enicks, Darwin ; Oleszek, Gerald

Author_Institution

Dept. of Electr. & Comput. Eng., Colorado Univ., Colorado Springs, CO

Volume

53

Issue

8

fYear

2006

Firstpage

1834

Lastpage

1839

Abstract

This paper reports on observations of enhanced carbon confinement of ultranarrow boron profiles in silicon-germanium-carbon heterojunction bipolar transistors (SiGeC HBTs). Electrical measurements of HBT devices with base regions formed during a low-pressure chemical-vapor deposition, with this method shows that a current gain (beta) is increased, base sheet resistance (R_bs) is reduced, and the maximum oscillation frequency (f_max) is improved

Keywords

Ge-Si alloys; boron; carbon compounds; chemical vapour deposition; doping profiles; heterojunction bipolar transistors; semiconductor device measurement; HBT devices; SiGeC; enhanced carbon confinement; heterojunction bipolar transistors; low-pressure chemical-vapor deposition; silicon-germanium-carbon; ultranarrow boron profile; Boron; Germanium silicon alloys; Heterojunction bipolar transistors; Hydrogen; Inductors; Phase change materials; Semiconductor films; Silicon germanium; Springs; Substrates; Boron; diffusion processes; heterojunction bipolar transistors (HBTs); silicon–germanium (SiGe);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.877014

Filename

1661885