Title :
Experimental verification of operation of the indium-doped infrared-sensing MOSFET
Author :
Forbes, L. ; Wittmer, L.L.
Author_Institution :
University of Arkansas, Fayetteville, Ark.
fDate :
12/1/1975 12:00:00 AM
Abstract :
Verification demonstrating operation of the indium-doped silicon infrared-sensing MOSFET (IRFET) is provided. This is a new type of detector for the 3-5-µm infrared wavelength regions, and the detector has been found to operate according to the original design proposal and criteria.
Keywords :
Boron; Conductivity; Gold; Impurities; Indium; Infrared detectors; Infrared spectra; MOSFET circuits; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18333
