High-Frequency and Noise Performances of 65-nm MOSFET at Liquid Nitrogen Temperature

Author

Siligaris, Alexandre ; Pailloncy, Guillaume ; Delcourt, Sébastien ; Valentin, Raphael ; Lepilliet, Sylvie ; Danneville, François ; Gloria, Daniel ; Dambrine, Gilles

Author_Institution

CEA/LETI/DCIS/SCME, Grenoble

Volume

53

Issue

8

fYear

2006

Firstpage

1902

Lastpage

1908

Abstract

In this paper, the high-frequency properties of MOSFETs at low-temperature operation are investigated through measurements and electrical simulations. The experimental results show that the device achieves a 335-GHz f_max and a 300-GHz f_t when operating at low temperature (78 K), which constitutes, respectively, a 78% and 34% improvement compared to the room temperature performances (296 K). The minimum noise figure NF_min decreases from 1.4 dB (296 K) to 0.5 dB at 30 GHz (78 K), while the associated gain increases from 8 to 12 dB

Keywords

MOSFET; cryogenic electronics; semiconductor device measurement; 0.5 dB; 12 dB; 30 GHz; 300 GHz; 335 GHz; 65 nm; 78 K; MOSFET; electrical simulations; high-frequency characterization; high-frequency noise; liquid nitrogen temperature; low-temperature operation; noise performance; Electric variables measurement; Hafnium; Low-frequency noise; MOS devices; MOSFET circuits; Nitrogen; Noise figure; Noise measurement; Performance gain; Temperature sensors; HF characterization; High-frequency noise; MOSFET; low temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.877872

Filename

1661893