A Detailed Failure Analysis Examination of the Effect of Thermal Cycling on Cu TSV Reliability

Author

Okoro, Chukwudi ; Lau, John W. ; Golshany, Fardad ; Hummler, Klaus ; Obeng, Yaw S.

Author_Institution

Semicond. & Dimensional Metrol. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

Volume

61

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

15

Lastpage

22

Abstract

In this paper, the reliability of through-silicon via (TSV) daisy chains under thermal cycling conditions was examined. The electrical resistance of TSV daisy chains was found to increase with the number of thermal cycles, due to thermally induced damage leading to the formation and growth of defects. The contributions of each identified damage type to the change in the electrical resistance of the TSV chain were evaluated by electrical modeling. Thermo-mechanical modeling showed a good correlation between the observed damage locations and the simulated stress-concentration regions of the TSV.

Keywords

copper; failure analysis; finite element analysis; integrated circuit modelling; integrated circuit reliability; three-dimensional integrated circuits; Cu; TSV daisy chains; TSV reliability; failure analysis; finite element analysis; thermal cycles; thermal cycling; thermo-mechanical modeling; through silicon via; Failure analysis; Metallization; Stress; Thermal analysis; Thermal resistance; Through-silicon vias; Failure analysis; finite element analysis; three-dimensional integrated circuits; through-silicon vias;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2291297

Filename

6675783