Title :
A High-Linearity Modified Uni-Traveling Carrier Photodiode With Offset Effects of Nonlinear Capacitance
Author :
Pan, Huapu ; Beling, Andreas ; Chen, Hao ; Campbell, Joe C. ; Yoder, P.D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
Third-order intermodulation distortion in an InGaAs/InP charge compensated modified uni-traveling carrier photodiode is characterized using a two-tone setup. Plots of the third-order local intercept point (IP3) versus photocurrent exhibit peaks. A simple analytical model is developed which explains that the peaks are due to the interaction of voltage-dependent and photocurrent-dependent capacitance effects.
Keywords :
III-V semiconductors; capacitance; gallium arsenide; indium compounds; intermodulation distortion; photoconductivity; photodiodes; InGaAs-InP; charge compensated modified unitraveling carrier photodiode; photocurrent; photocurrent-dependent capacitance effects; third-order intermodulation distortion; third-order local intercept point; two-tone setup; voltage-dependent capacitance effects; InGaAs; linearity; nonlinear capacitance; nonlinear responsivity; photodiode (PD); third-order intermodulation distortion;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2009.2024168
