• DocumentCode
    1052035
  • Title

    p-i-n diodes for the modulation of mm-wave frequencies

  • Author

    Müller, Jörg

  • Author_Institution
    Technische Universität, Braunschweig, Germany
  • Volume
    23
  • Issue
    1
  • fYear
    1976
  • fDate
    1/1/1976 12:00:00 AM
  • Firstpage
    61
  • Lastpage
    63
  • Abstract
    A theoretical expression for a figure of merit Qswith respect to RF losses and switching time for p-i-n diodes is given. A fabrication technique is presented which is especially suited to obtain a large Qs. The static, dynamic, and RF data of the diodes and their performance in a 180-degree phase shift modulator at a frequency of 35 GHz and a bitrate of 256 Mbit/s are presented.
  • Keywords
    Bridge circuits; Capacitive sensors; Force measurement; Force sensors; Frequency modulation; P-i-n diodes; Radio frequency; Semiconductor diodes; Silicon; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18349
  • Filename
    1478363
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1052035