DocumentCode
1052117
Title
Design of a 16 384-bit serial charge-coupled memory device
Author
Chou, Sunlin
Author_Institution
Intel Corporation, Santa Clara, CA
Volume
23
Issue
2
fYear
1976
fDate
2/1/1976 12:00:00 AM
Firstpage
78
Lastpage
86
Abstract
This paper describes a 16 384-bit serial charge-coupled memory device designed primarily for low cost and compatibility with existing high-volume manufacturing techniques. To obtain low access time, the device was organized as 64 recirculating shift registers each 256 bits long. Any one register can be selected at random for reading or writing, by means of a 6-bit address input. The alternatives considered in choosing the charge-coupled device (CCD) structure and chip organization are discussed. Data regeneration circuits are described in detail. The device was fabricated on a silicon chip, with an area of 2.07 mil2/bit (including all peripheral circuitry). It operates at data rates exceeding 2 MHz, and has a minimum average access time of under 100 µs.
Keywords
Charge coupled devices; Circuits; Costs; Fabrication; Frequency; Manufacturing; Production; Shift registers; Variable structure systems; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1976.18356
Filename
1478370
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