• DocumentCode
    1052117
  • Title

    Design of a 16 384-bit serial charge-coupled memory device

  • Author

    Chou, Sunlin

  • Author_Institution
    Intel Corporation, Santa Clara, CA
  • Volume
    23
  • Issue
    2
  • fYear
    1976
  • fDate
    2/1/1976 12:00:00 AM
  • Firstpage
    78
  • Lastpage
    86
  • Abstract
    This paper describes a 16 384-bit serial charge-coupled memory device designed primarily for low cost and compatibility with existing high-volume manufacturing techniques. To obtain low access time, the device was organized as 64 recirculating shift registers each 256 bits long. Any one register can be selected at random for reading or writing, by means of a 6-bit address input. The alternatives considered in choosing the charge-coupled device (CCD) structure and chip organization are discussed. Data regeneration circuits are described in detail. The device was fabricated on a silicon chip, with an area of 2.07 mil2/bit (including all peripheral circuitry). It operates at data rates exceeding 2 MHz, and has a minimum average access time of under 100 µs.
  • Keywords
    Charge coupled devices; Circuits; Costs; Fabrication; Frequency; Manufacturing; Production; Shift registers; Variable structure systems; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18356
  • Filename
    1478370