Title :
Direct bonding of recessed-structure SAW filter on silicon substrate
Author :
Tsai, Shih-Hung ; Wang, Na-Fu ; Horng, Jui-Hong ; Houng, Mau-Phon ; Wang, Yeong-Her
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
7/1/2004 12:00:00 AM
Abstract :
A procedure for fabricating a recessed surface acoustic wave (SAW) device coupled with silicon substrate is reported. The recessed structure is stable and rugged enough against the bonding process, and it can be applied to integrate a semiconductor device into one chip by a direct bonding technique. In this paper, the tensile strength of silicon (Si)-to-recessed-SAW filter is measured, and the performance of the device is discussed.
Keywords :
bonding processes; lithium compounds; piezoelectric materials; surface acoustic wave filters; tensile strength; Si-LiNbO/sub 3/; chip scale integration; direct bonding process; recessed structure SAW filter; recessed surface acoustic wave device; semiconductor device integration; silicon substrate; tensile strength; Bonding; Fabrication; Ocean temperature; SAW filters; Sea surface; Semiconductor devices; Silicon; Substrates; Surface contamination; Surface treatment;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2004.1320752
