DocumentCode :
1052162
Title :
Low-Threshold Strained Quantum-Well GaSb-Based Lasers Emitting in the 2.5- to 2.7- 
m Wavelength Range
Author :
Kashani-Shirazi, Kaveh ; Vizbaras, Kristijonas ; Bachmann, Alexander ; Arafin, Shamsul ; Amann, Markus-Christian
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Volume :
21
Issue :
16
fYear :
2009
Firstpage :
1106
Lastpage :
1108
Abstract :
GaInAsSb-GaSb strained quantum-well (QW) ridge waveguide diode lasers emitting in the wavelength range from 2.51 to 2.72 mum have been grown by molecular beam epitaxy. The devices show ultralow threshold current densities of 44 A/cm2 (L rarr infin) for a single QW device at 2.51 mum, which is the lowest reported value in continuous-wave operation near room temperature (15degC) at this wavelength. The devices have an internal loss of 3 cm-1 and a characteristic temperature of 42 K. By using broader QWs, wavelengths up to 2.72 mum could be achieved.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor quantum wells; waveguide lasers; GaInAsSb-GaSb; continuous-wave operation; molecular beam epitaxy; quantum well diode lasers; ridge waveguide diode lasers; threshold current densities; wavelength 2.51 micron to 2.72 micron; Optical spectroscopy; quantum-well (QW) lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2023077
Filename :
5061880
Link To Document :
