DocumentCode :
1052185
Title :
The charge-coupled RAM cell concept
Author :
Tasch, Al F., Jr. ; Frye, Robert C. ; Fu, Horng-Sen
Author_Institution :
Texas Instruments, Inc., Dallas, TX
Volume :
23
Issue :
2
fYear :
1976
fDate :
2/1/1976 12:00:00 AM
Firstpage :
126
Lastpage :
131
Abstract :
A new concept in MOS dynamic RAM cells is described and demonstrated. The charge-coupled RAM (CC RAM) cell combines the storage capacity and transfer gate of the one-transistor cell into a single gate. The resulting cell is simpler than the conventional one-transistor cell and possesses significant advantages in packing density and potentially higher yield. One of the variations of the CC RAM cell concept results in a cell whose operation is identical (voltage and timing) to that of the present one-transistor cell. In addition, the CC RAM cell fabrication is essentially the same as the present one-transistor cell process. The CC RAM is an attractive candidate for the next generation RAM´s.
Keywords :
Channel bank filters; Conductivity; DRAM chips; Dielectric constant; Dielectric materials; Doping; Implants; Material storage; Timing; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1976.18362
Filename :
1478376
Link To Document :
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