DocumentCode :
105225
Title :
High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs
Author :
Yuanfeng Chen ; Di Geng ; Mativenga, Mallory ; Hyoungsik Nam ; Jin Jang
Author_Institution :
Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea
Volume :
36
Issue :
2
fYear :
2015
fDate :
Feb. 2015
Firstpage :
153
Lastpage :
155
Abstract :
We propose a way to achieve high-speed circuits with dual-gate (DG) bulk-accumulation back-channeletched (BCE) amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) using the pseudo-CMOS structure. The DG BCE a-IGZO TFTs exhibit field-effect mobility (μFE), threshold voltage (Vth), and subthreshold swing of 30 ± 3 cm2/Vs, 2 ± 0.5 V, and 120 ± 30 mV/decade, respectively. For input voltage (VDD) of 20 V, seven-stage pseudo-CMOS ring oscillators implemented with the BCE bulk-accumulation a-IGZO TFTs show oscillation frequency of 6.51 MHz, which corresponds to a propagation delay time of 11 ns/stage and is faster than the 17 ns/stage delay of the fastest single-gate-driven ratioed coplanar a-IGZO TFT circuits.
Keywords :
CMOS analogue integrated circuits; amorphous semiconductors; gallium compounds; high-speed integrated circuits; indium compounds; oscillators; thin film circuits; thin film transistors; transistor circuits; wide band gap semiconductors; zinc compounds; DG BCE a-IGZO TFTs; InGaZnO; amorphous indium-gallium-zinc-oxide; bulk accumulation a-IGZO TFTs; dual-gate bulk-accumulation back-channeletched thin-film transistors; field-effect mobility; frequency 6.51 MHz; high-speed pseudoCMOS circuits; propagation delay time; seven-stage pseudoCMOS ring oscillators; single-gate-driven ratioed coplanar a-IGZO TFT circuits; subthreshold swing; thin-film transistors; threshold voltage; voltage 20 V; Barium; Delays; Inverters; Logic gates; Ring oscillators; Thin film transistors; a-IGZO TFTs; bulk accumulation; pseudo-CMOS; ring oscillator;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2379700
Filename :
6994792
Link To Document :
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