Title :
Charge-coupled device and charge-injection device imaging
Author_Institution :
Naval Research Laboratory, Washington, DC
fDate :
2/1/1976 12:00:00 AM
Abstract :
A brief review is given of the advances in solid-state imaging during the last ten years. The issues of surface channel versus buried channel, aliasing versus prefiltering, frame transfer (FT) versus interline transfer (IT) versus charge-injection device (CID), and direct view versus EBIC imaging are discussed. Time-delay-and-integration (TDI) and infrared imaging are discussed. Finally applications are considered.
Keywords :
Charge coupled devices; Clocks; Electron traps; Frequency; Infrared imaging; Noise level; Optical arrays; Optical imaging; Semiconductor device noise; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18371
