Title :
Twin-layer PCCD performance for different doping levels of the surface layer
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
fDate :
2/1/1976 12:00:00 AM
Abstract :
The performance and technology of the twin-layer PCCD has been investigated for different doping levels of the surface layer. With respect to charge transfer efficiency and charge handling capacity, optimum conditions for the doping level of the surface layer can be established.
Keywords :
Capacitance; Charge coupled devices; Charge transfer; Crosstalk; Diffusion bonding; Doping; Etching; Lead compounds; Metallization; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18380
