DocumentCode
1052369
Title
Twin-layer PCCD performance for different doping levels of the surface layer
Author
Peek, Herman L.
Author_Institution
Philips Research Laboratories, Eindhoven, The Netherlands
Volume
23
Issue
2
fYear
1976
fDate
2/1/1976 12:00:00 AM
Firstpage
235
Lastpage
238
Abstract
The performance and technology of the twin-layer PCCD has been investigated for different doping levels of the surface layer. With respect to charge transfer efficiency and charge handling capacity, optimum conditions for the doping level of the surface layer can be established.
Keywords
Capacitance; Charge coupled devices; Charge transfer; Crosstalk; Diffusion bonding; Doping; Etching; Lead compounds; Metallization; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1976.18380
Filename
1478394
Link To Document