Title :
Airbridged-gate MESFETs fabricated by isotropic reactive ion etching
Author :
Hur, Katerina Y. ; Compton, Richard C.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fDate :
10/1/1993 12:00:00 AM
Abstract :
The authors have designed, fabricated, and characterized 0. 1-μm-gate-length MESFETs in which isotropic BCl3 reactive ion etching is used to remove material under the gate feed to form an airbridge and isolate the active area. This etching is more controllable than wet etch techniques now used. For comparison, conventional mesa-isolated MESFETs were fabricated on the same wafer. By measuring the RF properties at several bias points, fringing capacitances have been extracted. The parasitic capacitances are smaller in the airbridged-gate configuration
Keywords :
Schottky gate field effect transistors; sputter etching; 0.1 micron; MESFETs; RF properties; airbridge; fringing capacitances; isotropic reactive ion etching; mesa-isolated; parasitic capacitances; Bridge circuits; Capacitance measurement; Feeds; Gallium arsenide; Lithography; MESFETs; Metallization; Parasitic capacitance; Radio frequency; Wet etching;
Journal_Title :
Electron Devices, IEEE Transactions on