DocumentCode
1052435
Title
Annealing of thin magnetoresistive permalloy films
Author
Krongelb, Sol ; Gangulee, Amitava ; Das, Gobinda
Author_Institution
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y.
Volume
9
Issue
3
fYear
1973
fDate
9/1/1973 12:00:00 AM
Firstpage
568
Lastpage
570
Abstract
The figure of merit of magnetoresistive Permalloy thin films, which are commonly used for bubble domain sensors, is shown to improve considerably after annealing treatments. This improvement is caused by a lowering of the electrical resistivity, due to particle size and grain growth with activation energies of 0.70 ± 0.05 eV and 1.86 ± 0.15 eV, respectively. Comparisons indicate that thin permalloy films, which are deposited at 250°C and subsequently annealed, are superior as sensor materials to those deposited at 325°C.
Keywords
Magnetoresistive effects; Permalloy films; Annealing; Coercive force; Electric resistance; Electrons; Magnetic films; Magnetic sensors; Magnetoresistance; Sensor phenomena and characterization; Switches; Temperature;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1973.1067608
Filename
1067608
Link To Document