DocumentCode :
1052435
Title :
Annealing of thin magnetoresistive permalloy films
Author :
Krongelb, Sol ; Gangulee, Amitava ; Das, Gobinda
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y.
Volume :
9
Issue :
3
fYear :
1973
fDate :
9/1/1973 12:00:00 AM
Firstpage :
568
Lastpage :
570
Abstract :
The figure of merit of magnetoresistive Permalloy thin films, which are commonly used for bubble domain sensors, is shown to improve considerably after annealing treatments. This improvement is caused by a lowering of the electrical resistivity, due to particle size and grain growth with activation energies of 0.70 ± 0.05 eV and 1.86 ± 0.15 eV, respectively. Comparisons indicate that thin permalloy films, which are deposited at 250°C and subsequently annealed, are superior as sensor materials to those deposited at 325°C.
Keywords :
Magnetoresistive effects; Permalloy films; Annealing; Coercive force; Electric resistance; Electrons; Magnetic films; Magnetic sensors; Magnetoresistance; Sensor phenomena and characterization; Switches; Temperature;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1973.1067608
Filename :
1067608
Link To Document :
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