Analysis and modeling of nonlinearities in VLSI MOSFETs including substrate effects

Presents a detailed analysis of the distortion components of the drain current of integrated MOS transistors operated in nonsaturation, in which signals are simultaneously applied to the drain, gate, and substrate terminals. In contrast with previous analyses which have accounted for the modulation of the inversion layer channel mobility by both transverse and longitudinal fields (short channel devices), the model yields highly accurate analytical expressions in closed form (down to at least 80 dB below fundamental), and hence easily lends itself to ´hand´ analysis. Moreover, the model predicts that individual odd or even distortion components can be suppressed (nulled) by a range of combinations of substrate bias and signal amplitudes. Alternatively, odd distortion components can be nulled by suitable substrate drive while even distortion components can be nulled by properly driving the gate terminals of the MOSFETs. Experimental data which validate the model are presented, and the effectiveness of harmonic suppression in a standard, tunable, MOSFET-C integrator is demonstrated