DocumentCode :
105248
Title :
A Review of the Pinned Photodiode for CCD and CMOS Image Sensors
Author :
Fossum, Eric R. ; Hondongwa, Donald B.
Author_Institution :
Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA
Volume :
2
Issue :
3
fYear :
2014
fDate :
May-14
Firstpage :
33
Lastpage :
43
Abstract :
The pinned photodiode is the primary photodetector structure used in most CCD and CMOS image sensors. This paper reviews the development, physics, and technology of the pinned photodiode.
Keywords :
CCD image sensors; CMOS image sensors; p-i-n photodiodes; photodetectors; CCD image sensor; CMOS image sensor; pinned photodiode; primary photodetector structure; CMOS image sensors; CMOS integrated circuits; Charge coupled devices; Charge transfer; Electric potential; Photodiodes; CMOS active pixel image sensor (CIS); Charge-coupled device (CCD); photodetector; pinned photodiode (PPD); pixel;
fLanguage :
English
Journal_Title :
Electron Devices Society, IEEE Journal of the
Publisher :
ieee
ISSN :
2168-6734
Type :
jour
DOI :
10.1109/JEDS.2014.2306412
Filename :
6742594
Link To Document :
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