A new type of transistor: CBT

Author

Kang, Bao-wei ; Zhao, Wei ; Dong, Li-Min ; Situ, Yan

Author_Institution

Dept. of Electron. Eng., Beijing Polytech. Univ., China

Volume

40

Issue

10

fYear

1993

fDate

10/1/1993 12:00:00 AM

Firstpage

1805

Lastpage

1811

Abstract

A transistor called the channel-base transistor (CBT), which is constructed by making channels through the base of the conventional bipolar junction transistors (BJTs), is proposed. In principle, a CBT can be treated as a combination of a BJT and a normally-off junction-type field-effect transistor (E-JFET). Silicon planer CBTs have been fabricated with BJTs on the same wafer for comparison. The electrical characteristics of CBTs are similar to those of a conventional BJTs, but the variations of current gain with temperature and emitter current in CBTs are much less than those in the BJTs. In addition, the magnitude of current gain of CBTs is higher than that of comparable BJTs. Transistor-transistor-logic (TTL) NAND-gate ICs implemented with CBTs have been fabricated. The temperature variations of parameters in CBT ICs are less than those in BJT ICs. Experiments have shown that silicon CBT discrete devices and ICs can be used over a wide range of temperatures from -60°C to 200°C. Experimental and theoretical analysis results for CBTs are presented

Keywords

NAND circuits; bipolar transistors; integrated logic circuits; junction gate field effect transistors; transistor-transistor logic; -60 to 200 degC; CBT; NAND-gate ICs; TTL; bipolar junction transistors; channel-base transistor; current gain; electrical characteristics; emitter current; normally-off junction-type field-effect transistor; temperature variations; Circuit stability; Doping; FETs; Fabrication; Instruments; Region 4; Silicon; Temperature distribution; Transconductance; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.277337

Filename

277337