Title :
−40°C<T<95° C mode-hop-free operation of uncooled AlGaInAs-MQW discrete-mode laser diode with emission at λ=1.3 µm
Author :
Phelan, R. ; Kelly, B. ; O´Carroll, J. ; Herbert, C. ; Duke, A. ; O´Gorman, James
Author_Institution :
Eblana Photonics Ltd., Dublin
Abstract :
Discrete-mode lasers fabricated in the AlGaInAs/InP multiple quantum well (MQW) system and emitting around lambda=1.3 mum operate efficiently at high temperatures and exhibit mode-hop-free singlemode operation in the temperature, T, range -40degC<T<95degC.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; laser modes; optical fabrication; quantum well lasers; AlGaInAs-InP; MQW discrete-mode laser diode; discrete-mode laser fabrication; mode-hop-free operation; multiple quantum well system; temperature -40 degC to 95 degC; wavelength 1.3 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20092208
