Title :
A new approach to the simulation of small-signal current gains of pnpn structures
Author :
Hátle, M. ; Vobecký, J.
Author_Institution :
Dept. of Microelectron., Czech Tech. Univ. of Prague, Czechoslovakia
fDate :
10/1/1993 12:00:00 AM
Abstract :
An approach to the mathematical simulation of small-signal current gains (alphas) versus frequency that respects Fulop´s measuring procedure is proposed, using an arrangement close to the real measuring circuit. For this purpose, an exact 1-D mathematical model is used. The dependence of small-signal alphas on the anode current of a high power thyristor (GTO) was found to be in agreement with measurements for low anode-to-cathode voltage
Keywords :
amplification; semiconductor device models; simulation; thyristors; 1D model; Fulop´s measuring procedure; GTO; anode current; anode-to-cathode voltage; frequency; high power thyristor; mathematical simulation; p-n-p-n structures; pnpn structures; small-signal alphas; small-signal current gains; Anodes; Circuit simulation; Computational modeling; Current measurement; Doping profiles; Frequency measurement; Gain measurement; Mathematical model; Thyristors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
