Title :
25 Gbit/s 100°C operation of highly reliable InGaAs/GaAsP-VCSELs
Author :
Hatakeyama, H. ; Akagawa, Takeshi ; Fukatsu, K. ; Suzuki, Nobuhiro ; Tokutome, Keiichi ; Yashiki, K. ; Anan, T. ; Tsuji, Mineo
Author_Institution :
Nanoelectron. Res. Labs., NEC Corp., Otsu
Abstract :
1.1 mum-range high-speed oxide-VCSELs with InGaAs/GaAsP strain-compensated multiple quantum wells (MQWs) have been developed. 25Gbit/s 100degC operation and high reliability over 3000 h under 150degC were demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; laser beams; laser cavity resonators; laser reliability; quantum well lasers; surface emitting lasers; InGaAs-GaAsP; bit rate 25 Gbit/s; high-reliability laser; high-speed oxide-VCSEL; strain-compensated multiple quantum well; temperature 100 degC; vertical-cavity surface emitting laser; wavelength 1.1 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20093096
