DocumentCode :
1052640
Title :
Radiation effects on magnetic bubble domain devices
Author :
Chen, T.T. ; Archer, J.L. ; Williams, R.A. ; Henry, Rodney D.
Author_Institution :
Rockwell International Corporation, Anaheim, Calif.
Volume :
9
Issue :
3
fYear :
1973
fDate :
9/1/1973 12:00:00 AM
Firstpage :
385
Lastpage :
389
Abstract :
The effect of nuclear radiation on garnet film material parameters and bubble domain devices has been studied both during and after irradiation. The materials investigated include CVD grown Y3(FeGa)5O12, Er3(FeGa)5O12and LPE grown (YGdTm)3(FeGa)5O12films. The devices were different shift registers fabricated on ion implanted, non implanted and double layer YGdTmGaIG LPE films and GaErIG CVD films. Permanent damage on the material parameters caused by the irradiation were determined by measuring the 4\\pi M_{s}, \\sigma_{w}, l, \\mu_{w}, H_{c}, V_{s} and defect density before and after each irradiation, while the device performances were studied by comparing the propagation and annihilation margin and the detector signal. The irradiation sources included neutrons from a nuclear reactor and gamma rays from a Co60source. No significant Variation due to irradiation was found in any of the measurements for neutron irradiation up to 1015n/cm21 MeV equivalent and gamma irradiation up to 50 Mrads. Transient stability of information stored in a bubble memory was tested by writing information into different shift registers and then bombarding these registers with a high energy (∼1.5 McV) pulsed electron beam. The results indicate there is no loss of data for a dose rate of 104rads in a 30 ns pulse.
Keywords :
Electron radiation effects; Gamma radiation effects; Garnet films; Magnetic bubble devices; Magnetic material irradiation effects; Neutron radiation effects; Density measurement; Erbium; Garnet films; Magnetic devices; Magnetic domains; Magnetic materials; Neutrons; Performance evaluation; Radiation effects; Shift registers;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1973.1067628
Filename :
1067628
Link To Document :
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