Title :
Three-dimensional simulation of planar semiconductor diodes
Author :
Kavadias, Spyros ; Misiakos, Konstantinos
Author_Institution :
Microelectron. Inst., Demokritos NCSR, Athens, Greece
fDate :
10/1/1993 12:00:00 AM
Abstract :
Accurate three-dimensional simulation results are presented, showing the geometry dependence of the current of a planar diode. Comparison of the three-dimensional simulation to one- and two-dimensional results reveals the range of validity of simplified models based on lower-dimensional analysis. The current of square and rectangular junctions is approximated by analytical expressions that provide insight about the bulk and the edge components
Keywords :
semiconductor device models; semiconductor diodes; simulation; bulk components; edge components; geometry dependence; models; planar semiconductor diodes; rectangular junctions; square junctions; three-dimensional simulation; Analytical models; Difference equations; Differential equations; Finite difference methods; Fourier transforms; Geometry; Microelectronics; Semiconductor diodes; Solid modeling; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
