Title :
GaAs Schottky mixer diode with integral guard layer structure
Author_Institution :
Raytheon Company, Waltham, MA
fDate :
3/1/1976 12:00:00 AM
Abstract :
Schottky-barrier microwave mixer diodes of GaAs have been fabricated in a novel epitaxially grown high resistivity guard layer configuration. These devices are capable of withstanding RF pulse energies of up to 2 ergs with no deterioration in noise figure performance. Such high resistance to RF spike burnout is attributed to device planarity and passivation resulting from the integral guard layer design.
Keywords :
Capacitance; Dielectric losses; Electrons; Gallium arsenide; Microwave devices; Noise figure; Radar; Radio frequency; Schottky diodes; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18406
