• DocumentCode
    1052653
  • Title

    GaAs Schottky mixer diode with integral guard layer structure

  • Author

    Linden, K.J.

  • Author_Institution
    Raytheon Company, Waltham, MA
  • Volume
    23
  • Issue
    3
  • fYear
    1976
  • fDate
    3/1/1976 12:00:00 AM
  • Firstpage
    363
  • Lastpage
    364
  • Abstract
    Schottky-barrier microwave mixer diodes of GaAs have been fabricated in a novel epitaxially grown high resistivity guard layer configuration. These devices are capable of withstanding RF pulse energies of up to 2 ergs with no deterioration in noise figure performance. Such high resistance to RF spike burnout is attributed to device planarity and passivation resulting from the integral guard layer design.
  • Keywords
    Capacitance; Dielectric losses; Electrons; Gallium arsenide; Microwave devices; Noise figure; Radar; Radio frequency; Schottky diodes; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18406
  • Filename
    1478420
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1052653