DocumentCode
1052659
Title
A new semiconductor switching device
Author
Yamamoto, Yusaku
Volume
23
Issue
3
fYear
1976
fDate
3/1/1976 12:00:00 AM
Firstpage
364
Lastpage
366
Abstract
A new bipolar-type semiconductor switching device is proposed, fabricated by two diffusion processes and without any isolation technique. The device has an n+-diffused small electrode instead of a gate electrode in the MOS transistor structure. This device can have high photo sensitivity in the charge storage mode operation.
Keywords
Capacitance; Electric variables; Gallium arsenide; Noise figure; Noise measurement; Pulse amplifiers; Pulse measurements; Radio frequency; Schottky diodes; Semiconductor diodes;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1976.18407
Filename
1478421
Link To Document