DocumentCode :
1052659
Title :
A new semiconductor switching device
Author :
Yamamoto, Yusaku
Volume :
23
Issue :
3
fYear :
1976
fDate :
3/1/1976 12:00:00 AM
Firstpage :
364
Lastpage :
366
Abstract :
A new bipolar-type semiconductor switching device is proposed, fabricated by two diffusion processes and without any isolation technique. The device has an n+-diffused small electrode instead of a gate electrode in the MOS transistor structure. This device can have high photo sensitivity in the charge storage mode operation.
Keywords :
Capacitance; Electric variables; Gallium arsenide; Noise figure; Noise measurement; Pulse amplifiers; Pulse measurements; Radio frequency; Schottky diodes; Semiconductor diodes;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1976.18407
Filename :
1478421
Link To Document :
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