Title :
A new semiconductor switching device
Author :
Yamamoto, Yusaku
fDate :
3/1/1976 12:00:00 AM
Abstract :
A new bipolar-type semiconductor switching device is proposed, fabricated by two diffusion processes and without any isolation technique. The device has an n+-diffused small electrode instead of a gate electrode in the MOS transistor structure. This device can have high photo sensitivity in the charge storage mode operation.
Keywords :
Capacitance; Electric variables; Gallium arsenide; Noise figure; Noise measurement; Pulse amplifiers; Pulse measurements; Radio frequency; Schottky diodes; Semiconductor diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18407
