A nonpinchoff gradual channel model for deep-submicron MOSFET´s

Author

Fujishima, M. ; Asada, K.

Author_Institution

Dept. of Electron. Eng., Tokyo Univ., Japan

Volume

40

Issue

10

fYear

1993

fDate

10/1/1993 12:00:00 AM

Firstpage

1883

Lastpage

1885

Abstract

A drain current model for a short-channel MOSFET, which is named the nonpinchoff model, is proposed. In this model, the effect of the horizontal electric field is precisely taken into account to solve the two-dimensional Poisson´s equation. The pinchoff point, where the horizontal electric field tends to infinity in the conventional gradual-channel approximation, disappears in the nonpinchoff model, so that linear and saturation regions are smoothly connected. As a result, the ambiguity of the boundary between the linear region and saturation region in a short channel MOSFET can be understood using a single equation for the drain current

Keywords

electric current; insulated gate field effect transistors; semiconductor device models; deep-submicron; drain current model; horizontal electric field; linear region; nonpinchoff gradual channel model; saturation region; short-channel MOSFET; two-dimensional Poisson´s equation; Capacitance; Current-voltage characteristics; H infinity control; MOSFET circuits; Permittivity; Poisson equations; Silicon; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.277352

Filename

277352