Title :
A nonpinchoff gradual channel model for deep-submicron MOSFET´s
Author :
Fujishima, M. ; Asada, K.
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
fDate :
10/1/1993 12:00:00 AM
Abstract :
A drain current model for a short-channel MOSFET, which is named the nonpinchoff model, is proposed. In this model, the effect of the horizontal electric field is precisely taken into account to solve the two-dimensional Poisson´s equation. The pinchoff point, where the horizontal electric field tends to infinity in the conventional gradual-channel approximation, disappears in the nonpinchoff model, so that linear and saturation regions are smoothly connected. As a result, the ambiguity of the boundary between the linear region and saturation region in a short channel MOSFET can be understood using a single equation for the drain current
Keywords :
electric current; insulated gate field effect transistors; semiconductor device models; deep-submicron; drain current model; horizontal electric field; linear region; nonpinchoff gradual channel model; saturation region; short-channel MOSFET; two-dimensional Poisson´s equation; Capacitance; Current-voltage characteristics; H infinity control; MOSFET circuits; Permittivity; Poisson equations; Silicon; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
