A study of the electrical series resistance of silicon IMPATT diodes

Author

Mitra, M. ; Das, M. ; Kar, S. ; Roy, S.K.

Author_Institution

Inst. of Radiophys. & Electron., Calcutta, India

Volume

40

Issue

10

fYear

1993

fDate

10/1/1993 12:00:00 AM

Firstpage

1890

Lastpage

1893

Abstract

A theoretical study of the relationship between the electrical series resistance (R_s) of an IMPATT diode and the threshold current for oscillation and the corresponding frequency has been carried out, considering the inequality of the ionization rates and drift velocities of the two types of charge carriers in silicon. The series resistance has been obtained experimentally by measuring the threshold current for oscillation and the corresponding oscillation frequency with an X-band silicon SDR device embedded in a resonant-cap cavity. The results indicate that the method is a suitable one for determining R_s, and they agree with the manufacturer´s data. The method would be suitable for determining R _s for millimeter-wave diodes with appropriate values of the ionization rate ratios at maximum electric field

Keywords

IMPATT diodes; electric resistance; elemental semiconductors; silicon; IMPATT diodes; MM-wave devices; SDR device; Si; X-band; charge carriers; drift velocities; electrical series resistance; frequency; ionization rates; millimeter-wave diodes; oscillation; resonant-cap cavity; threshold current; Charge carriers; Current measurement; Diodes; Electric resistance; Electrical resistance measurement; Electron mobility; Frequency; Ionization; Silicon; Threshold current;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.277354

Filename

277354