Calculated performance of indium phosphide solar cells under monochromatic illumination

Author

Jain, Raj K.

Author_Institution

NASA Lewis Res. Center, Cleveland, OH, USA

Volume

40

Issue

10

fYear

1993

fDate

10/1/1993 12:00:00 AM

Firstpage

1893

Lastpage

1895

Abstract

The performance of an experimental, high-efficiency, n⁺p InP solar cell under monochromatic illumination has been modeled. The cell modeling gives a peak efficiency in excess of 44% at 0.87 μm and 25°C. The effect of cell series resistance on its performance has also been studied. Calculated efficiencies for an optimized InP cell are in excess of 50% in the wavelength band of 0.75-0.925 μm. Calculations of conversion efficiency versus source wavelength for InP solar cells are compared to results for other solar cell materials at a source illumination of 1 W/cm²

Keywords

III-V semiconductors; electric resistance; indium compounds; semiconductor device models; solar cells; 0.75 to 0.925 micron; 0.87 micron; 25 degC; 44 percent; cell modeling; cell series resistance; conversion efficiency; high-efficiency; monochromatic illumination; n⁺p InP solar cell; optimized InP cell; source wavelength; Gallium arsenide; Indium phosphide; Laser beam cutting; Lighting; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Power lasers; Solar power generation; Wavelength conversion;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.277355

Filename

277355