Title :
Sweep oscillation mode of GaAs IMPATT diode
Author :
Okamoto, H. ; Ikeda, M.
Author_Institution :
Nippon Telegraph and Telephone Public Co., Musashino-shi, Tokyo
fDate :
3/1/1976 12:00:00 AM
Abstract :
Properties of the sweep oscillation mode of GaAs IMPATT diodes in the millimeter-wave region are studied in comparison with Si IMPATT diodes. In spite of their narrower depletion width, the GaAs diodes oscillate at lower frequencies than the Si devices. This can be explained by using the newly measured drift velocity of GaAs.
Keywords :
Bipolar transistors; Frequency; Gallium arsenide; Impurities; Millimeter wave communication; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Schottky diodes; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18410
