Deep-submicrometer CMOS/SIMOX delay modeling by time-dependent capacitance model

Author

Lee, M. ; Asada, K.

Author_Institution

Nippon Motorola Ltd., Tokyo, Japan

Volume

40

Issue

10

fYear

1993

fDate

10/1/1993 12:00:00 AM

Firstpage

1897

Lastpage

1901

Abstract

A new and generic time-dependent capacitance (NEW-TC) model for propagation delay (speed) in deep-submicrometer-gate CMOS/SIMOX is analytically studied. Theoretical predictions by the NEW-TC model are compared with measurements of the propagation delay in 51-stage ring oscillators. It is found that less than 5% errors are observed between the measured and NEW-TC model performance of a 0.1-μm ring oscillator test circuit. It is also found that an R_d-based model with a proper empirical factor is as good as the NEW-TC model when output capacitance is fixed. It is concluded that the NEW-TC model is better than the conventional models

Keywords

CMOS integrated circuits; SIMOX; capacitance; delays; semiconductor device models; CMOS/SIMOX delay modeling; deep submicron gate; deep-submicrometer-gate; propagation delay; time-dependent capacitance model; Circuit testing; Electron mobility; MOS devices; MOSFET circuits; Parasitic capacitance; Propagation delay; Ring oscillators; Semiconductor device modeling; Threshold voltage; Transient analysis;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.277357

Filename

277357