Title :
500 GHz cutoff frequency SiGe HBTs
Author :
Zerounian, N. ; Aniel, F. ; Barbalat, B. ; Chevalier, P. ; Chantre, A.
Author_Institution :
Univ. Paris-Sud, Orsay
Abstract :
A current gain cutoff frequency fT of 508 GHz is reported for a SiGe heterojunction bipolar transistor (HBT) operating at 40 K. This 63% increase over the 311 GHz value measured at room temperature results from the overall decrease of the transit and charging times. Two HBTs are compared to highlight the importance of the topology of the HBT to reach maximum performances.
Keywords :
amplification; heterojunction bipolar transistors; SiGe; SiGe heterojunction bipolar transistor; current gain cutoff frequency; frequency 311 GHz; frequency 508 GHz;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070994
