• DocumentCode
    1052741
  • Title

    Accurate large-signal single current source thermal model for GaAs MESFET/HEMT

  • Author

    Chaibi, M. ; Fernández, T. ; Rodriguez-Tellez, J. ; Cano, J.L. ; Aghoutane, M.

  • Author_Institution
    Univ. of Cantabria, Santander
  • Volume
    43
  • Issue
    14
  • fYear
    2007
  • Abstract
    An accurate approach to the simulation of the DC and pulsed IV characteristics of GaAs MESFETs over the -70 to -+70degC temperature range is presented. The new approach, suitably modified can be applied to existing DC models to increase their accuracy and range of operation.
  • Keywords
    Schottky gate field effect transistors; constant current sources; gallium arsenide; high electron mobility transistors; GaAs; HEMT; MESFET; single current source thermal model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20071111
  • Filename
    4271362
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1052741