Title :
SOI MOSFET effective channel mobility
Author :
Sherony, Melanic J. ; Su, Lisa T. ; Chung, James E. ; Antoniadis, Dimitri A.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
fDate :
2/1/1994 12:00:00 AM
Abstract :
The standard bulk MOSFET definition for effective electric field is modified for SOI devices to account for nonzero electric field at the back oxide interface. The effective channel mobility in fully-depleted n-channel SOI MOSFET´s is shown to be independent of applied backgate bias when the modified Eeff definition is used. The effective channel mobility as a function of Eeff is also shown to be independent of film thickness for fully-depleted devices
Keywords :
SIMOX; carrier mobility; insulated gate field effect transistors; SOI MOSFET effective channel mobility; Si-SiO2; back oxide interface; backgate bias; effective electric field; film thickness; fully-depleted n-channel SOI MOSFET; nonzero electric field; Current measurement; Digital circuits; Doping; MOSFET circuits; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Thin film circuits; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
