An analytical SiGe-base HBT model and its effects on a BICMOS inverter circuit

Author

Lu, T.C. ; Kuo, J.B.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

41

Issue

2

fYear

1994

fDate

2/1/1994 12:00:00 AM

Firstpage

272

Lastpage

276

Abstract

Reports an analytical model for SiGe-base HBTs with a graded germanium profile in the base region and its effects on the rise time in a related BiCMOS inverter circuit. According to the model results, for an HBT with a graded germanium profile, a peak germanium concentration of 15% at the base/collector junction is sufficient to generate an optimized forward transit time. For a BiCMOS inverter using linearly graded SiGe-base HBT´s with a peak germanium concentration larger than 15% at the base/collector, its rise time is not strongly correlated to its peak germanium concentration

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; logic gates; semiconductor device models; BICMOS inverter circuit; SiGe; analytical SiGe-base HBT model; base region; base/collector junction; graded germanium profile; linearly graded SiGe-base HBT; optimized forward transit time; rise time; Analytical models; BiCMOS integrated circuits; Doping; Electrons; Forward contracts; Germanium silicon alloys; Heterojunction bipolar transistors; Inverters; Photonic band gap; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.277366

Filename

277366