Title :
An analytical SiGe-base HBT model and its effects on a BICMOS inverter circuit
Author :
Lu, T.C. ; Kuo, J.B.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
2/1/1994 12:00:00 AM
Abstract :
Reports an analytical model for SiGe-base HBTs with a graded germanium profile in the base region and its effects on the rise time in a related BiCMOS inverter circuit. According to the model results, for an HBT with a graded germanium profile, a peak germanium concentration of 15% at the base/collector junction is sufficient to generate an optimized forward transit time. For a BiCMOS inverter using linearly graded SiGe-base HBT´s with a peak germanium concentration larger than 15% at the base/collector, its rise time is not strongly correlated to its peak germanium concentration
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; logic gates; semiconductor device models; BICMOS inverter circuit; SiGe; analytical SiGe-base HBT model; base region; base/collector junction; graded germanium profile; linearly graded SiGe-base HBT; optimized forward transit time; rise time; Analytical models; BiCMOS integrated circuits; Doping; Electrons; Forward contracts; Germanium silicon alloys; Heterojunction bipolar transistors; Inverters; Photonic band gap; Silicon germanium;
Journal_Title :
Electron Devices, IEEE Transactions on
