• DocumentCode
    1052807
  • Title

    Field-enhanced trapping and surface effects on monolithic integrated planar GaAs Gunn diodes

  • Author

    Chryssafis, A. ; Harrington, R.J.

  • Author_Institution
    University of Newcastle upon Tyne, Newcastle upon Tyne, England
  • Volume
    23
  • Issue
    4
  • fYear
    1976
  • fDate
    4/1/1976 12:00:00 AM
  • Firstpage
    426
  • Lastpage
    428
  • Abstract
    The effects of the thickness of the semi-insulating substrate as well as the effects of surface recombination and surface charges are studied concerning the performance of planar Gunn diodes with the aid of a digital computer.
  • Keywords
    Charge carrier processes; Diodes; Electron traps; Gallium arsenide; Gunn devices; Mathematical model; Permittivity; Poisson equations; Spontaneous emission; Surface treatment;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18420
  • Filename
    1478434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1052807