Title :
Field-enhanced trapping and surface effects on monolithic integrated planar GaAs Gunn diodes
Author :
Chryssafis, A. ; Harrington, R.J.
Author_Institution :
University of Newcastle upon Tyne, Newcastle upon Tyne, England
fDate :
4/1/1976 12:00:00 AM
Abstract :
The effects of the thickness of the semi-insulating substrate as well as the effects of surface recombination and surface charges are studied concerning the performance of planar Gunn diodes with the aid of a digital computer.
Keywords :
Charge carrier processes; Diodes; Electron traps; Gallium arsenide; Gunn devices; Mathematical model; Permittivity; Poisson equations; Spontaneous emission; Surface treatment;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18420
