A novel high-voltage high-speed MESFET using a standard GaAs digital IC process

Author

Mok, Philip K T ; Salama, C. André T

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

Volume

41

Issue

2

fYear

1994

fDate

2/1/1994 12:00:00 AM

Firstpage

246

Lastpage

250

Abstract

A novel gallium arsenide high-voltage MESFET structure (HVFET) suitable for high-voltage, high-speed output drivers is described. The device uses an extended drain region and a two-step gate field plate structure to achieve high breakdown voltage of 130 V. The device is implemented using a standard GaAs enhancement/depletion MESFET digital IC process without any additional processing steps and exhibits turn-on and turn-off times under 200 ps

Keywords

Schottky gate field effect transistors; digital integrated circuits; driver circuits; electric breakdown of solids; field effect integrated circuits; gallium arsenide; power transistors; 130 V; 200 ps; GaAs; HV FET; HV high-speed output drivers; enhancement/depletion MESFET process; extended drain region; high breakdown voltage; high-speed MESFET; high-voltage device; standard GaAs digital IC process; two-step gate field plate structure; Bridge circuits; Contacts; Digital integrated circuits; Driver circuits; Electric breakdown; Gallium arsenide; High speed integrated circuits; Implants; MESFET integrated circuits; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.277371

Filename

277371