Title :
A novel high-voltage high-speed MESFET using a standard GaAs digital IC process
Author :
Mok, Philip K T ; Salama, C. André T
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
fDate :
2/1/1994 12:00:00 AM
Abstract :
A novel gallium arsenide high-voltage MESFET structure (HVFET) suitable for high-voltage, high-speed output drivers is described. The device uses an extended drain region and a two-step gate field plate structure to achieve high breakdown voltage of 130 V. The device is implemented using a standard GaAs enhancement/depletion MESFET digital IC process without any additional processing steps and exhibits turn-on and turn-off times under 200 ps
Keywords :
Schottky gate field effect transistors; digital integrated circuits; driver circuits; electric breakdown of solids; field effect integrated circuits; gallium arsenide; power transistors; 130 V; 200 ps; GaAs; HV FET; HV high-speed output drivers; enhancement/depletion MESFET process; extended drain region; high breakdown voltage; high-speed MESFET; high-voltage device; standard GaAs digital IC process; two-step gate field plate structure; Bridge circuits; Contacts; Digital integrated circuits; Driver circuits; Electric breakdown; Gallium arsenide; High speed integrated circuits; Implants; MESFET integrated circuits; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
