DocumentCode :
1052871
Title :
Temperature dependence of the anomalous leakage current in polysilicon-on-insulator MOSFET´s
Author :
Bhattacharya, Suryanarayana S. ; Banerjee, Sanjay K. ; Nguyen, Bich-yen ; Tobin, Philip J.
Author_Institution :
Digital Commun. Div., Rockwell Int. Corp., Newport Beach, CA, USA
Volume :
41
Issue :
2
fYear :
1994
fDate :
2/1/1994 12:00:00 AM
Firstpage :
221
Lastpage :
227
Abstract :
A new analytical model is presented for the temperature and bias dependence of the anomalous leakage current based on thermionic field emission via grain boundary traps in the gate-drain overlap region in polysilicon-on-insulator MOSFET´s. The existing model based on pure field emission (tunneling) via grain boundary traps does not include a temperature dependence and therefore cannot explain the observed strong temperature dependence of leakage at low gate voltages, as well as the weaker temperature dependence at high gate voltages, which the new analytical model presented in this paper can. Below 150 K, we believe that impact ionization due to the increasing carrier mean free path leads to the observed increase in the leakage current with decreasing temperature. Since the analytical model does not include impact ionization, it cannot model the leakage current at low temperatures
Keywords :
carrier mean free path; electron traps; grain boundaries; hole traps; impact ionisation; insulated gate field effect transistors; leakage currents; semiconductor device models; semiconductor-insulator boundaries; silicon; tunnelling; 150 K; Si-SiO2; analytical model; anomalous leakage current; bias dependence; carrier mean free path; gate-drain overlap region; grain boundary traps; high gate voltages; impact ionization; low gate voltages; polysilicon-on-insulator MOSFET; temperature dependence; thermionic field emission; tunneling; Analytical models; Environmentally friendly manufacturing techniques; Grain boundaries; Impact ionization; Leakage current; Low voltage; MOSFET circuits; Silicon on insulator technology; Temperature dependence; Thermionic emission;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.277375
Filename :
277375
Link To Document :
بازگشت