DocumentCode :
1052883
Title :
Freeze-out effects on n-channel MOSFET´s
Author :
Aymeloglu, Simeon ; Zemel, J.N. ; Zemel, Jay N.
Author_Institution :
University of Pennsylvania, Philadelphia, PA
Volume :
23
Issue :
4
fYear :
1976
fDate :
4/1/1976 12:00:00 AM
Firstpage :
466
Lastpage :
470
Abstract :
Surface admittance measurements have been carried out on
Keywords :
Admittance measurement; Energy measurement; Frequency measurement; Impurities; Parasitic capacitance; Silicon; Temperature; Thermal expansion; Thermal stresses; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1976.18427
Filename :
1478441
Link To Document :
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