DocumentCode
1052904
Title
Frequency response of GaAlAs light-emitting diodes
Author
Harth, W. ; Huber, W. ; Heinen, J.
Author_Institution
Technische Universität München, Munich, Germany
Volume
23
Issue
4
fYear
1976
fDate
4/1/1976 12:00:00 AM
Firstpage
478
Lastpage
480
Abstract
The frequency response of epitaxial GaAlAs single-heterojunction light-emitting diodes was investigated as a function of active-layer hole-concentration and diode area. The modulation bandwidth can be considerably increased by high doping, but an upper limit is imposed by the space-charge capacitance of the diode. Further improvement of the frequency characteristics can be realized by reduction of the diode area. The highest 3-dB modulation bandwidth achieved in this investigation was 100 MHz.
Keywords
Bandwidth; Cutoff frequency; Frequency response; Gallium arsenide; Heterojunctions; Laboratories; Light emitting diodes; Light sources; Tellurium; Tin;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1976.18429
Filename
1478443
Link To Document