Lateral polysilicon pn diodes: current-voltage characteristics simulation between 200 K and 400 K using a numerical approach

Author

Aziz, Abdelbaki ; Bonnaud, Olivier ; Lhermite, H. ; Raoult, François

Author_Institution

Groupe de Microelectron., Rennes I Univ., France

Volume

41

Issue

2

fYear

1994

fDate

2/1/1994 12:00:00 AM

Firstpage

204

Lastpage

211

Abstract

The current-voltage characteristics of lateral pn diodes fabricated in polysilicon layer grown by LPCVD on oxidized silicon substrates are analyzed versus temperature. The simulation proposed by Greve (1985) using the analytical current modeling is applied to forward and reverse junction currents for various temperatures; this modeling shows its limitations. Then to fit the experimental characteristics at low and high temperatures as well as at low and high current levels, a numerical modeling is developed taking into account the local electrical field effect on recombination and generation mechanisms at grain boundaries in the whole of the structure, i.e., quasi-neutral and depleted regions. This modeling allows one to fit the complete I-V experimental curves in the whole of the considered temperature range (200 K-400 K) with physical acceptable parameters

Keywords

electron-hole recombination; elemental semiconductors; grain boundaries; semiconductor device models; semiconductor diodes; silicon; 200 to 400 K; I-V experimental curves; LPCVD; Si; analytical current modeling; current-voltage characteristics simulation; depleted regions; forward junction currents; generation mechanisms; grain boundaries; high current levels; high temperatures; lateral polysilicon pn diodes; local electrical field effect; low current levels; low temperatures; numerical approach; numerical modeling; oxidized silicon substrates; physical acceptable parameters; quasi-neutral regions; recombination; reverse junction currents; temperature dependence; Analytical models; Current-voltage characteristics; Diodes; Grain boundaries; Numerical models; Silicon; Space charge; Substrates; Temperature distribution; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.277378

Filename

277378