Title :
GaInAsN/GaAs quantum dot laser diodes operating in 1.36 μm wavelength range
Author :
Marquardt, B. ; Bisping, D. ; Forchel, A. ; Fischer, M.
Author_Institution :
Tech. Phys., Univ. Wurzburg, Germany
fDate :
7/6/2006 12:00:00 AM
Abstract :
For the first time, a pseudomorphic GaInAsN DWELL laser with laser emission at 1.36 μm and a low transparency current density (206 A/cm2) grown by molecular beam epitaxy is reported. The GaInAsN DWELL laser shows a redshift in comparison to an N-free GaInAs DWELL laser of about 90 nm and a transparency current density of 35 A/cm2 per single QD layer.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; quantum dot lasers; quantum well lasers; 1.36 micron; GaInAsN-GaAs; current density; molecular beam epitaxy; quantum dot laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060944
