Title :
Improved TRAPATT performance by stabilizing mesa diode surfaces
fDate :
5/1/1976 12:00:00 AM
Abstract :
Substantial improvement in the reproducibility of extremely efficient S-band TRAPATT diodes is shown to result from sputtering layers of silicon oxynitride onto the exposed surfaces of the mesa diodes. The sputtered layers stabilize the device against changes in dc current-voltage characteristics induced by the TRAPATT mode.
Keywords :
Current-voltage characteristics; Degradation; Diodes; Electron traps; Gallium arsenide; Indium phosphide; Monte Carlo methods; Optical scattering; Pulse amplifiers; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18439
