DocumentCode
1053016
Title
500 μm diameter CMOS compatible avalanche photodiodes with 500 MHz bandwidth
Author
Moloney, A.M. ; Morrison, A.P.
Author_Institution
Sch. of Electron. & Commun. Eng., Dublin Inst. of Technol., Ireland
Volume
42
Issue
14
fYear
2006
fDate
7/6/2006 12:00:00 AM
Firstpage
819
Lastpage
820
Abstract
Novel silicon-on-insulator, large area (500 μm diameter), CMOS avalanche photodiodes for use with plastic optical fibre are presented. Patterns have been formed on the devices to reduce junction capacitance. Measurements on the patterned devices, at 650 nm and 26 V reverse bias, revealed bandwidths of >500 MHz.
Keywords
CMOS integrated circuits; avalanche photodiodes; capacitance; optical fibres; silicon-on-insulator; 26 V; 500 MHz; 500 micron; 650 nm; CMOS compatible avalanche photodiodes; junction capacitance reduction; plastic optical fibre; silicon-on-insulator;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20061455
Filename
1661993
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