Title :
500 μm diameter CMOS compatible avalanche photodiodes with 500 MHz bandwidth
Author :
Moloney, A.M. ; Morrison, A.P.
Author_Institution :
Sch. of Electron. & Commun. Eng., Dublin Inst. of Technol., Ireland
fDate :
7/6/2006 12:00:00 AM
Abstract :
Novel silicon-on-insulator, large area (500 μm diameter), CMOS avalanche photodiodes for use with plastic optical fibre are presented. Patterns have been formed on the devices to reduce junction capacitance. Measurements on the patterned devices, at 650 nm and 26 V reverse bias, revealed bandwidths of >500 MHz.
Keywords :
CMOS integrated circuits; avalanche photodiodes; capacitance; optical fibres; silicon-on-insulator; 26 V; 500 MHz; 500 micron; 650 nm; CMOS compatible avalanche photodiodes; junction capacitance reduction; plastic optical fibre; silicon-on-insulator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20061455
