Title :
Frequency limits of GaAs and InP field-effect transistors at 300 K and 77 K with typical active-layer doping
Author :
Maloney, T.J. ; Frey, Jeffrey
Author_Institution :
Cornell University, Ithaca, NY
fDate :
5/1/1976 12:00:00 AM
Abstract :
InP FET´s with active layer doping of 1017donors/ cm3have limiting values of fTroughly fifty per cent higher than those of equivalent GaAs devices for lengths ranging from 0.5 µm to 3 µm at 300 K, and from eighty percent to forty percent higher in this gate length range at 77 K.
Keywords :
Diodes; Doping; Electron traps; FETs; Frequency; Gallium arsenide; Indium phosphide; Monte Carlo methods; Optical scattering; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18440