DocumentCode
1053028
Title
Surface KOH treatment in AlGaN-based photodiodes
Author
Lan, W.H. ; Huang, K.C. ; Huang, K.F.
Author_Institution
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Taiwan
Volume
42
Issue
14
fYear
2006
fDate
7/6/2006 12:00:00 AM
Firstpage
821
Lastpage
822
Abstract
KOH treatment is investigated as a method to improve the I-V characteristics of AlGaN-based photodiodes. The defects in the photodiode may enhance the dark current, and cause some photocurrents with incident photon energy less than the absorption edge. With the KOH treatment in the process, the defects and whisker-like features could be reduced. High rejection ratio in the spectral responsivity could be achieved. The KOH treatment is a good method to reduce the surface defects in AlGaN-based photodiodes.
Keywords
aluminium compounds; dark conductivity; photodiodes; potassium compounds; surface phenomena; surface treatment; AlGaN; KOH; dark current; incident photon energy; photodiodes; surface defects; surface treatment; whisker like features;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20061088
Filename
1661994
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