DocumentCode
1053048
Title
Effective defect density for MOS breakdown: Dependence on oxide thickness
Author
Li, S.P. ; Maserjian, J.
Author_Institution
California State Polytechnic University, Pomona, CA
Volume
23
Issue
5
fYear
1976
fDate
5/1/1976 12:00:00 AM
Firstpage
525
Lastpage
527
Abstract
A procedure is introduced for measuring an effective density of defects that takes into account time-dependent dielectric breakdown in MOS devices. Measurements are obtained that show a surprising exponential decrease in this density with decreasing oxide thickness.
Keywords
Area measurement; Breakdown voltage; Density measurement; Dielectric breakdown; Dielectric measurements; Electric breakdown; MOS capacitors; Stress; Temperature; Thickness measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1976.18443
Filename
1478457
Link To Document