Title :
High-performance ZnO thin-film transistors fabricated at low temperature on glass substrates
Author :
Liu, C.C. ; Chen, Y.S. ; Huang, J.J.
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
7/6/2006 12:00:00 AM
Abstract :
A high-performance enhancement-mode ZnO thin-film transistor (TFT) on a glass substrate is demonstrated. The ZnO thin film is deposited by RF magnetron sputtering with the presence of O2 at low deposition rate and low temperature. The IDS is as high as 1 mA when biased at the saturation region VDS=10-20 V and VGS=5 V without any post-thermal anneal. The Ion/Ioff ratio is 3×106. The results are among the best ZnO TFTs ever obtained.
Keywords :
II-VI semiconductors; annealing; glass; sputter deposition; thin film transistors; zinc compounds; 10 to 20 V; 5 V; RF magnetron sputtering; ZnO; post-thermal annealing; thin film transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20061518
